PMV65UN,215 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

О ДАТАШИТЕ

• Маркировка
  PMV65UN,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMV65UN,215 Continuous Drain Current: 2.2 A Drain-source Breakdown Voltage: 20 V Factory Pack Quantity: 3000 Fall Time: 12 ns Forward Transconductance Gfs (max / Min): 8.7 S Gate Charge Qg: 3.9 nC Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Power Dissipation: 455 mW Resistance Drain-source Rds (on): 76 mOhms Rise Time: 18 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 ns RoHS: yes Drain-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 76 mOhms Forward Transconductance gFS (Max / Min): 8.7 S Typical Turn-Off Delay Time: 21 ns
• Количество страниц
  14 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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